Abstract
The heterostructures are suitable for developing high-performance electronic and optoelectronic devices. In this work, a signifcant interest in the design and analysis of compound semiconductor Aluminium Gallium Arsenide (AlGaAs) and Gallium
Arsenide (GaAs) heterostructures has been realized. These structures are fabricated with alternating layers of GaAs (a direct bandgap material) and AlGaAs (an indirect bandgap material) and have been used to design a range of high-performance devices, including lasers, solar cells, and feld-efect transistors. A 30 nm AlGaAs consisting of a middle layer between two
GaAs layers with a GaAs substrate has been reported. This work has been carried out at 300 K utilizing a quantum transport and self-consistent method for the proposed AlGaAs/GaAs one-dimensional heterostructure with a gate length of 2 nm and a voltage varying from 0 to 0.1 V. The measured values of doping density (nd) and electron density (ne) of AlGaAs/GaAs one-dimensional heterostructure are 8.96 × 1011 cm−3 and 2 × 1026 cm−3, respectively. The system response to geometric
changes in several parameters has been realized. Hence, confned restricted states were computed using wave functions and energies. The GaAs layer on top of quantum well heterostructure interfaces has been used to modulate the wave functions
(eigenstates) resulting in pseudo-one dimensional or small-dimension eigenstates. In this work, a comprehensive analysis of 1D AlGaAs/GaAs heterostructure through benchmarking with several homo-structures (various thicknesses) has been performed.
Arsenide (GaAs) heterostructures has been realized. These structures are fabricated with alternating layers of GaAs (a direct bandgap material) and AlGaAs (an indirect bandgap material) and have been used to design a range of high-performance devices, including lasers, solar cells, and feld-efect transistors. A 30 nm AlGaAs consisting of a middle layer between two
GaAs layers with a GaAs substrate has been reported. This work has been carried out at 300 K utilizing a quantum transport and self-consistent method for the proposed AlGaAs/GaAs one-dimensional heterostructure with a gate length of 2 nm and a voltage varying from 0 to 0.1 V. The measured values of doping density (nd) and electron density (ne) of AlGaAs/GaAs one-dimensional heterostructure are 8.96 × 1011 cm−3 and 2 × 1026 cm−3, respectively. The system response to geometric
changes in several parameters has been realized. Hence, confned restricted states were computed using wave functions and energies. The GaAs layer on top of quantum well heterostructure interfaces has been used to modulate the wave functions
(eigenstates) resulting in pseudo-one dimensional or small-dimension eigenstates. In this work, a comprehensive analysis of 1D AlGaAs/GaAs heterostructure through benchmarking with several homo-structures (various thicknesses) has been performed.
| Original language | English |
|---|---|
| Pages (from-to) | 1 |
| Number of pages | 15 |
| Journal | Journal of Electrical Engineering and Technology |
| DOIs | |
| Publication status | Published (VoR) - 2024 |
Keywords
- Compound semiconductor
- Conduction band energy
- Doping density
- Electron density
- Electrostatic potential
- Microelectronics
- Nanotechnology
- Quantum well
- VLSI
- Wave functions