@article{0158f3c0c01d4d18a16a5915f5c75d26,
title = "Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation",
keywords = "Channel length, cylindrical surrounding double-gate (CSDG) MOSFET, nanotechnology, natural length, scaling pattern, semiconductors, short channel effects (SCEs), VLSI",
author = "Maduagwu, {Uchechukwu A.} and Srivastava, {Viranjay M.}",
note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",
year = "2021",
doi = "10.1109/ACCESS.2021.3121315",
language = "English",
volume = "9",
pages = "142541--142550",
journal = "IEEE Access",
issn = "2169-3536",
publisher = "IEEE",
}