Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation

Uchechukwu A. Maduagwu*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    6 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)142541-142550
    Number of pages10
    JournalIEEE Access
    Volume9
    DOIs
    Publication statusPublished (VoR) - 2021

    Keywords

    • Channel length
    • cylindrical surrounding double-gate (CSDG) MOSFET
    • nanotechnology
    • natural length
    • scaling pattern
    • semiconductors
    • short channel effects (SCEs)
    • VLSI

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