Simulation Analysis of High Field-Effect Mobility in p-Channel-Based Cylindrical Thin-Film Transistors

Viswanath G. Akkili*, N. Prudhvi Raju, R. Thangavel, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish
    Pages (from-to)5015-5025
    Number of pages11
    JournalJournal of Electronic Materials
    Volume51
    Issue number9
    DOIs
    Publication statusPublished (VoR) - Sept 2022

    Keywords

    • Cylindrical transistor
    • density of states
    • electronic band structure
    • nanotechnology
    • p-type semiconductor
    • tin monoxide
    • VLSI

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