@article{2b303efa4c404af29e28cf90c70a5499,
title = "Simulation Analysis of High Field-Effect Mobility in p-Channel-Based Cylindrical Thin-Film Transistors",
keywords = "Cylindrical transistor, density of states, electronic band structure, nanotechnology, p-type semiconductor, tin monoxide, VLSI",
author = "Akkili, \{Viswanath G.\} and Raju, \{N. Prudhvi\} and R. Thangavel and Srivastava, \{Viranjay M.\}",
note = "Publisher Copyright: {\textcopyright} 2022, The Minerals, Metals \& Materials Society.",
year = "2022",
month = sep,
doi = "10.1007/s11664-022-09753-x",
language = "English",
volume = "51",
pages = "5015--5025",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "9",
}