Small signal modeling of scaled double-gate mosfet for GHz applications

Himangi Sood*, Viranjay M. Srivastava, Ghanshyam Singh

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)14-23
    Number of pages10
    JournalInformacije MIDEM
    Volume47
    Issue number1
    Publication statusPublished (VoR) - Mar 2017

    Keywords

    • Double-gate MOSFET
    • Microelectronics
    • RF devices
    • S-parameters
    • Short channel effect
    • VLSI

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