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Small signal modeling of scaled double-gate mosfet for GHz applications
Himangi Sood
*
,
Viranjay M. Srivastava
, Ghanshyam Singh
*
Corresponding author for this work
Jaypee University of Information Technology
University of KwaZulu-Natal
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Citations (SciVal)
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Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Signal Modeling
100%
Mosfet Gate
100%
Current Drain
66%
Illustrates
33%
Electric Power Utilization
33%
Scattering Parameters
33%
Device Structure
33%
Subthreshold Slope
33%
Circuit Design
33%
Potential Distribution
33%
State Device
33%
Surface Potential
33%
Technology Advancement
33%
Electric Field
33%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Electronic Circuit
33%
Capacitance
33%
Solid State Device
33%
Surface (Surface Science)
33%