Study of sige-si source stacked in silicon nano-tube tunnel FET

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Citations (SciVal)
    Original languageEnglish
    Title of host publicationProceedings of 4th International Conference on 2021 Devices for Integrated Circuit, DevIC 2021
    EditorsAngsuman Sarkar, Sandip Nandi
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages601-604
    Number of pages4
    ISBN (Electronic)9781728199559
    DOIs
    Publication statusPublished (VoR) - 19 May 2021
    Event4th International Conference on Devices for Integrated Circuit, DevIC 2021 - Kalyani, Nadia, India
    Duration: 19 May 202120 May 2021

    Publication series

    NameProceedings of 4th International Conference on 2021 Devices for Integrated Circuit, DevIC 2021

    Conference

    Conference4th International Conference on Devices for Integrated Circuit, DevIC 2021
    Country/TerritoryIndia
    CityKalyani, Nadia
    Period19/05/2120/05/21

    Keywords

    • High-K dielectric
    • I/Iratio
    • Microelectronics
    • Nanotechnology
    • Silicon Nano-Tube FET
    • VLSI

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