Temperature characteristics of FinFET based on channel fin width and working voltage

Yousif Atalla, Yasir Hashim*, Abdul Nasir Abd Ghafar, Waheb A. Jabbar

*Corresponding author for this work

    Research output: Contribution to journalReview articlepeer-review

    3 Citations (SciVal)

    Abstract

    This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF = 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ΔI at the working voltage VDD with range of 0-5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V).
    Original languageEnglish
    Pages (from-to)5650-5657
    Number of pages8
    JournalInternational Journal of Electrical and Computer Engineering
    Volume10
    Issue number6
    DOIs
    Publication statusPublished (VoR) - Dec 2020

    Funding

    This work was supported by the Ministry of Education, Malaysia, under Grant Scheme FRGS/1/2019/TK04/UMP/02/15 (Grant ID: RDU1901199).

    FundersFunder number
    Ministry of Higher Education, MalaysiaFRGS/1/2019/TK04/UMP/02/15, RDU1901199

      Keywords

      • Channel fin
      • Finfet
      • Mosfet
      • Sensitivity
      • Temperature

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