Temperature characteristics of Gate all around nanowire channel Si-TFET

Firas Natheer Abdul Kadir Agha, Yasir Hashim, Waheb Abduljabbar Shaif Abdullah

    Research output: Contribution to journalConference articlepeer-review

    6 Citations (SciVal)
    Original languageEnglish
    Article number012045
    JournalJournal of Physics: Conference Series
    Volume1755
    Issue number1
    DOIs
    Publication statusPublished (VoR) - 1 Mar 2021
    Event5th International Conference on Electronic Design, ICED 2020 - Perlis, Virtual, Malaysia
    Duration: 19 Aug 2020 → …

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