Temperature characteristics of Gate all around nanowire channel Si-TFET

Firas Natheer Abdul Kadir Agha; Yasir Hashim; Waheb Abduljabbar Shaif Abdullah

doi:10.1088/1742-6596/1755/1/012045

Temperature characteristics of Gate all around nanowire channel Si-TFET

Firas Natheer Abdul Kadir Agha
, Yasir Hashim
, Waheb Abduljabbar Shaif Abdullah

University of Mosul
Tishk International University
University Malaysia Pahang

Research output: Contribution to journal › Conference article › peer-review

9 Citations (SciVal)

Original language	English
Article number	012045
Journal	Journal of Physics: Conference Series
Volume	1755
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1755/1/012045
Publication status	Published (VoR) - 1 Mar 2021
Event	5th International Conference on Electronic Design, ICED 2020 - Perlis, Virtual, Malaysia Duration: 19 Aug 2020 → …

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title = "Temperature characteristics of Gate all around nanowire channel Si-TFET",

author = "Agha, \{Firas Natheer Abdul Kadir\} and Yasir Hashim and Abdullah, \{Waheb Abduljabbar Shaif\}",

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T1 - Temperature characteristics of Gate all around nanowire channel Si-TFET

AU - Agha, Firas Natheer Abdul Kadir

AU - Hashim, Yasir

AU - Abdullah, Waheb Abduljabbar Shaif

PY - 2021/3/1

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U2 - 10.1088/1742-6596/1755/1/012045

DO - 10.1088/1742-6596/1755/1/012045

M3 - Conference article

SN - 1742-6588

VL - 1755

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012045

T2 - 5th International Conference on Electronic Design, ICED 2020

Y2 - 19 August 2020

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Temperature characteristics of Gate all around nanowire channel Si-TFET

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