Temperature characteristics of silicon nanowire transistor depending on oxide thickness

Hani Taha AlAriqi, Waheb A. Jabbar*, Yasir Hashim, Hadi Bin Manap

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (SciVal)
    Original languageEnglish
    Article number03027
    Pages (from-to)3027-3024
    Number of pages4
    JournalJournal of Nano- and Electronic Physics
    Issue number3
    Publication statusPublished (VoR) - 2019


    This work is supported by the Universiti Malaysia Pahang (UMP) via Research Grant UMP-IBM Centre of Excellence RDU190304.

    FundersFunder number
    Universiti Malaysia PahangRDU190304


      • MuGFET
      • Simulation
      • SiNWT
      • Temperature sensitivity

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