Temperature characteristics of silicon nanowire transistor depending on oxide thickness

Hani Taha AlAriqi; Waheb A. Jabbar; Yasir Hashim; Hadi Bin Manap

doi:10.21272/jnep.11(3).03027

Temperature characteristics of silicon nanowire transistor depending on oxide thickness

Hani Taha AlAriqi, Waheb A. Jabbar^*, Yasir Hashim, Hadi Bin Manap

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (SciVal)

Original language	English
Article number	03027
Pages (from-to)	3027-3024
Number of pages	4
Journal	Journal of Nano- and Electronic Physics
Volume	11
Issue number	3
DOIs	https://doi.org/10.21272/jnep.11(3).03027
Publication status	Published (VoR) - 2019

Funding

This work is supported by the Universiti Malaysia Pahang (UMP) via Research Grant UMP-IBM Centre of Excellence RDU190304.

Funders	Funder number
Universiti Malaysia Pahang	RDU190304

Keywords

MuGFET
Simulation
SiNWT
Temperature sensitivity

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10.21272/jnep.11(3).03027

Cite this

@article{dd0e38df3445482ea1509846b10cb253,

title = "Temperature characteristics of silicon nanowire transistor depending on oxide thickness",

keywords = "MuGFET, Simulation, SiNWT, Temperature sensitivity",

author = "AlAriqi, {Hani Taha} and Jabbar, {Waheb A.} and Yasir Hashim and {Bin Manap}, Hadi",

note = "Publisher Copyright: {\textcopyright} 2019 Sumy State University.",

year = "2019",

doi = "10.21272/jnep.11(3).03027",

language = "English",

volume = "11",

pages = "3027--3024",

journal = "Journal of Nano- and Electronic Physics",

issn = "2077-6772",

number = "3",

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T1 - Temperature characteristics of silicon nanowire transistor depending on oxide thickness

AU - AlAriqi, Hani Taha

AU - Jabbar, Waheb A.

AU - Hashim, Yasir

AU - Bin Manap, Hadi

PY - 2019

Y1 - 2019

KW - MuGFET

KW - Simulation

KW - SiNWT

KW - Temperature sensitivity

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U2 - 10.21272/jnep.11(3).03027

DO - 10.21272/jnep.11(3).03027

M3 - Article

SN - 2077-6772

VL - 11

SP - 3027

EP - 3024

JO - Journal of Nano- and Electronic Physics

JF - Journal of Nano- and Electronic Physics

IS - 3

M1 - 03027

ER -

Temperature characteristics of silicon nanowire transistor depending on oxide thickness

Funding

Keywords

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