TY - GEN
T1 - Temperature sensitivity of silicon nanowire transistor based on channel length
AU - Alariqi, Hani Taha
AU - Jabbar, Waheb A.
AU - Hashim, Yasir
AU - Manap, Hadi Bin
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/4
Y1 - 2019/4
N2 - This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the channel length (Lg). It also studies the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistor. Current-voltage characteristics with different values of temperature with channel length [Lg= 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The obtained results show that SiNWT achieved better temperature sensitivity with channel length range between 25 nm to 85 nm at operation voltage (VDD) range 1 V to 3.5 V nm. Beyond that, the temperature sensitivity will be constant even though the channel length increased up to 105 nm and VDD increased to 5 V.
AB - This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the channel length (Lg). It also studies the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistor. Current-voltage characteristics with different values of temperature with channel length [Lg= 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The obtained results show that SiNWT achieved better temperature sensitivity with channel length range between 25 nm to 85 nm at operation voltage (VDD) range 1 V to 3.5 V nm. Beyond that, the temperature sensitivity will be constant even though the channel length increased up to 105 nm and VDD increased to 5 V.
KW - Channel length
KW - SiNWT
KW - Temperature sensitivity
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U2 - 10.1109/ICMSAO.2019.8880360
DO - 10.1109/ICMSAO.2019.8880360
M3 - Conference contribution
SN - 9781538676844
T3 - 2019 8th International Conference on Modeling Simulation and Applied Optimization, ICMSAO 2019
BT - 2019 8th International Conference on Modeling Simulation and Applied Optimization, ICMSAO 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th International Conference on Modeling Simulation and Applied Optimization, ICMSAO 2019
Y2 - 15 April 2019 through 17 April 2019
ER -