Temperature sensitivity of silicon nanowire transistor based on channel length

Hani Taha Alariqi, Waheb A. Jabbar, Yasir Hashim, Hadi Bin Manap

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    1 Citation (SciVal)

    Abstract

    This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the channel length (Lg). It also studies the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistor. Current-voltage characteristics with different values of temperature with channel length [Lg= 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The obtained results show that SiNWT achieved better temperature sensitivity with channel length range between 25 nm to 85 nm at operation voltage (VDD) range 1 V to 3.5 V nm. Beyond that, the temperature sensitivity will be constant even though the channel length increased up to 105 nm and VDD increased to 5 V.
    Original languageEnglish
    Title of host publication2019 8th International Conference on Modeling Simulation and Applied Optimization, ICMSAO 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781538676844
    ISBN (Print)9781538676844
    DOIs
    Publication statusPublished (VoR) - Apr 2019
    Event8th International Conference on Modeling Simulation and Applied Optimization, ICMSAO 2019 - Manama, Bahrain
    Duration: 15 Apr 201917 Apr 2019

    Publication series

    Name2019 8th International Conference on Modeling Simulation and Applied Optimization, ICMSAO 2019

    Conference

    Conference8th International Conference on Modeling Simulation and Applied Optimization, ICMSAO 2019
    Country/TerritoryBahrain
    CityManama
    Period15/04/1917/04/19

    Funding

    This research was supported by the Ministry of Education, Malaysia under the grant scheme No. FRGS/1/2018/TK04/UMP/02/11 (RDU190133), and Universiti Malaysia Pahang under Tabung Persidangan Luar Negara (TPLN).

    FundersFunder number
    Ministry of Higher Education, MalaysiaFRGS/1/2018/TK04/UMP/02/11, RDU190133
    Universiti Malaysia Pahang

      Keywords

      • Channel length
      • SiNWT
      • Temperature sensitivity

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