Thickness modeling of short-channel cylindrical surrounding double-gate mosfet at strong inversion using depletion depth analysis

Abha Dargar*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)319-325
    Number of pages7
    JournalMicro and Nanosystems
    Volume13
    Issue number3
    DOIs
    Publication statusPublished (VoR) - 2021

    Keywords

    • Cylindrical Surrounding Double-Gate (CSDG)
    • Junction depletion
    • Microelectronics
    • Nanotechnology
    • Short channel MOSFET
    • Thickness modeling
    • VLSI

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